IndiumV3, France, Analysis, bibRecord, 001808

Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces

Identifieur interne : 001808 ( France/Analysis ); précédent : 001807; suivant : 001809

Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces

Auteurs : RBID : Pascal:98-0460145

Descripteurs français

Pascal (Inist)
- 6835C, 8105E, 6865, 8115K, 7866F, 7320D, 8530V, 8530T, 7855C, 7340K, 7361E, Etude expérimentale, Etude théorique, Indium composé, Gallium arséniure, Aluminium composé, Semiconducteur III-V, Photoréflectance, Puits quantique semiconducteur, Transistor mobilité électron élevée, Structure interface, Croissance semiconducteur, Epitaxie phase vapeur, Photoluminescence, Hétérojonction semiconducteur.

English descriptors

KwdEn :
- Aluminium compounds, Experimental study, Gallium arsenides, High electron mobility transistors, III-V semiconductors, Indium compounds, Interface structure, Photoluminescence, Photoreflectance, Semiconductor growth, Semiconductor heterojunctions, Semiconductor quantum wells, Theoretical study, VPE.

Abstract

The achievement of high electrical performance InAlAs/InGaAs high-electron-mobility transistors (HEMTs) grown by metalorganic chemical vapor deposition, requires the growth of a good quality InGaAs channel/InAlAs spacer interface, in order to ensure good transport properties in the two-dimensional electron gas channel. In this article, the interface quality is evaluated as a function of growth interruption time, using photoreflectance spectroscopy. The experimental and theoretical approach used for this purpose is described. Layers representative of HEMT designs, namely 250 Å InGaAs single quantum wells between InAlAs layers were used for characterization. The interface roughness is estimated from the broadening of the high order quantum confined transitions. The results obtained suggest that the higher the growth interruption time, the smaller the interface roughness. Electrical characterization results indicate good agreement with the trends observed by photoreflectance. © 1998 American Institute of Physics.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 016461
to stream Main, to step Repository: 015A20
to stream France, to step Extraction: 001808

Links to Exploration step

Pascal:98-0460145

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces</title>
<author><name sortKey="Bru Chevallier, Catherine" uniqKey="Bru Chevallier C">Catherine Bru Chevallier</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LPM-INSA de Lyon CNRS (UMR5511), Bat 502, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">France</country>
<wicri:regionArea>LPM-INSA de Lyon CNRS (UMR5511), Bat 502, 20 avenue A. Einstein, 69621 Villeurbanne Cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Villeurbanne</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Baltagi, Youssef" uniqKey="Baltagi Y">Youssef Baltagi</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LPM-INSA de Lyon CNRS (UMR5511), Bat 502, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">France</country>
<wicri:regionArea>LPM-INSA de Lyon CNRS (UMR5511), Bat 502, 20 avenue A. Einstein, 69621 Villeurbanne Cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Villeurbanne</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Guillot, Gerard" uniqKey="Guillot G">Gerard Guillot</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LPM-INSA de Lyon CNRS (UMR5511), Bat 502, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">France</country>
<wicri:regionArea>LPM-INSA de Lyon CNRS (UMR5511), Bat 502, 20 avenue A. Einstein, 69621 Villeurbanne Cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Villeurbanne</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Hong, Kyushik" uniqKey="Hong K">Kyushik Hong</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, The University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122</s1>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Michigan</region>
</placeName>
<wicri:cityArea>Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, The University of Michigan, 1301 Beal Avenue, Ann Arbor</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Pavlidis, Dimitris" uniqKey="Pavlidis D">Dimitris Pavlidis</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, The University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122</s1>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Michigan</region>
</placeName>
<wicri:cityArea>Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, The University of Michigan, 1301 Beal Avenue, Ann Arbor</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">98-0460145</idno>
<date when="1998-11-01">1998-11-01</date>
<idno type="stanalyst">PASCAL 98-0460145 AIP</idno>
<idno type="RBID">Pascal:98-0460145</idno>
<idno type="wicri:Area/Main/Corpus">016461</idno>
<idno type="wicri:Area/Main/Repository">015A20</idno>
<idno type="wicri:Area/France/Extraction">001808</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0021-8979</idno>
<title level="j" type="abbreviated">J. appl. phys.</title>
<title level="j" type="main">Journal of applied physics</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>High electron mobility transistors</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Interface structure</term>
<term>Photoluminescence</term>
<term>Photoreflectance</term>
<term>Semiconductor growth</term>
<term>Semiconductor heterojunctions</term>
<term>Semiconductor quantum wells</term>
<term>Theoretical study</term>
<term>VPE</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>6835C</term>
<term>8105E</term>
<term>6865</term>
<term>8115K</term>
<term>7866F</term>
<term>7320D</term>
<term>8530V</term>
<term>8530T</term>
<term>7855C</term>
<term>7340K</term>
<term>7361E</term>
<term>Etude expérimentale</term>
<term>Etude théorique</term>
<term>Indium composé</term>
<term>Gallium arséniure</term>
<term>Aluminium composé</term>
<term>Semiconducteur III-V</term>
<term>Photoréflectance</term>
<term>Puits quantique semiconducteur</term>
<term>Transistor mobilité électron élevée</term>
<term>Structure interface</term>
<term>Croissance semiconducteur</term>
<term>Epitaxie phase vapeur</term>
<term>Photoluminescence</term>
<term>Hétérojonction semiconducteur</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The achievement of high electrical performance InAlAs/InGaAs high-electron-mobility transistors (HEMTs) grown by metalorganic chemical vapor deposition, requires the growth of a good quality InGaAs channel/InAlAs spacer interface, in order to ensure good transport properties in the two-dimensional electron gas channel. In this article, the interface quality is evaluated as a function of growth interruption time, using photoreflectance spectroscopy. The experimental and theoretical approach used for this purpose is described. Layers representative of HEMT designs, namely 250 Å InGaAs single quantum wells between InAlAs layers were used for characterization. The interface roughness is estimated from the broadening of the high order quantum confined transitions. The results obtained suggest that the higher the growth interruption time, the smaller the interface roughness. Electrical characterization results indicate good agreement with the trends observed by photoreflectance. © 1998 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0>
</fA01>
<fA02 i1="01"><s0>JAPIAU</s0>
</fA02>
<fA03 i2="1"><s0>J. appl. phys.</s0>
</fA03>
<fA05><s2>84</s2>
</fA05>
<fA06><s2>9</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>BRU CHEVALLIER (Catherine)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BALTAGI (Youssef)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>GUILLOT (Gerard)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>HONG (Kyushik)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>PAVLIDIS (Dimitris)</s1>
</fA11>
<fA14 i1="01"><s1>LPM-INSA de Lyon CNRS (UMR5511), Bat 502, 20 avenue A. Einstein, 69621 Villeurbanne Cedex, France</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, The University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122</s1>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>5291-5295</s1>
</fA20>
<fA21><s1>1998-11-01</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>126</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 1998 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>98-0460145</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i2="1"><s0>Journal of applied physics</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The achievement of high electrical performance InAlAs/InGaAs high-electron-mobility transistors (HEMTs) grown by metalorganic chemical vapor deposition, requires the growth of a good quality InGaAs channel/InAlAs spacer interface, in order to ensure good transport properties in the two-dimensional electron gas channel. In this article, the interface quality is evaluated as a function of growth interruption time, using photoreflectance spectroscopy. The experimental and theoretical approach used for this purpose is described. Layers representative of HEMT designs, namely 250 Å InGaAs single quantum wells between InAlAs layers were used for characterization. The interface roughness is estimated from the broadening of the high order quantum confined transitions. The results obtained suggest that the higher the growth interruption time, the smaller the interface roughness. Electrical characterization results indicate good agreement with the trends observed by photoreflectance. © 1998 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H35C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60H65</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A15K</s0>
</fC02>
<fC02 i1="05" i2="3"><s0>001B70H66F</s0>
</fC02>
<fC02 i1="06" i2="3"><s0>001B70C20D</s0>
</fC02>
<fC02 i1="07" i2="X"><s0>001D03F20</s0>
</fC02>
<fC02 i1="08" i2="X"><s0>001D03F04</s0>
</fC02>
<fC02 i1="09" i2="3"><s0>001B70H55C</s0>
</fC02>
<fC02 i1="10" i2="3"><s0>001B70C40K</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>6835C</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>8105E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>6865</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>8115K</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>7866F</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>7320D</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>8530V</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>8530T</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>7855C</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>7340K</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>7361E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Etude théorique</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Theoretical study</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Aluminium composé</s0>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Aluminium compounds</s0>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Photoréflectance</s0>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Photoreflectance</s0>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Transistor mobilité électron élevée</s0>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>High electron mobility transistors</s0>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Structure interface</s0>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Interface structure</s0>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Croissance semiconducteur</s0>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Semiconductor growth</s0>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0>
</fC03>
<fC03 i1="23" i2="3" l="ENG"><s0>VPE</s0>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Photoluminescence</s0>
</fC03>
<fC03 i1="24" i2="3" l="ENG"><s0>Photoluminescence</s0>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>Hétérojonction semiconducteur</s0>
</fC03>
<fC03 i1="25" i2="3" l="ENG"><s0>Semiconductor heterojunctions</s0>
</fC03>
<fN21><s1>299</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>9826M000251</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001808 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/France/Analysis/biblio.hfd -nk 001808 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:98-0460145
   |texte=   Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces

Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri